Thin film transistor array panel

ABSTRACT

A thin film transistor array panel includes: a substrate, a gate line disposed on the substrate, a data line intersecting the gate line, a drain electrode separated from the data line a first insulating layer covering the data line, a color filter disposed on the first insulating layer, a second insulating layer disposed on the color filter and having a contact hole exposing the drain electrode and the color filter and a pixel electrode disposed on the second insulating layer and connected to the drain electrode through the contact hole. The contact hole partially exposes the color filter near a portion where the drain electrode and the pixel electrode are connected to each other, and the pixel electrode covers the color filter exposed through the contact hole.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No.10-2009-0102476 filed on Oct. 27, 2009, the entire disclosure of whichis hereby incorporated by reference herein in it's entirety.

BACKGROUND OF THE INVENTION

(a) Technical Field

The present disclosure relates to a thin film transistor array panel andto a method of manufacturing thereof.

(b) Description of the Related Art

A thin film transistor (TFT) display panel may be used as a circuitboard for independently driving pixels in a liquid crystal display or anorganic electro-luminescent (EL) display device. The thin filmtransistor array panel may include a scanning signal line or a gate linetransmitting a scanning signal, an image signal line or a data linetransmitting an image signal, a thin film transistor connected to thegate line and the data line, and a pixel electrode connected to the thinfilm transistor.

In the operation of the thin film transistor array panel, the scanningsignal and the data signal may be transmitted through the gate line andthe data line, and the thin film transistor may control the data signaltransmitted to the pixel electrode according to the scanning signal.

Here, the gate line and the data line may be made of a conductivematerial such as, for example, a metal. The pixel electrode may be madeof a transparent conductive material such as, for example, indium tinoxide (ITO) or indium zinc oxide (IZO), and ITO and IZO may be used asan assistance layer to provide contact reliability when the gate lineand the data line are connected to an external driving circuit.

When the color filter is formed in the thin film transistor array panel,it may be damaged in the process of forming a contact portion where thepixel electrode and the thin film transistor are connected to eachother.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention andtherefore it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY OF THE INVENTION

The present invention may simultaneously prevent generation of a slightchange due to damage to the color filter and a filling failure of liquidcrystal.

In accordance with an exemplary embodiment of the present invention, athin film transistor array panel is provided. The thin film transistorarray panel includes: a substrate, a gate line disposed on thesubstrate, a data line intersecting the gate line, and a drain electrodeseparated from the data line, a first insulating layer covering the dataline, a color filter disposed on the first insulating layer, a secondinsulating layer disposed on the color filter and having a contact holeexposing the drain electrode and the color filter and a pixel electrodedisposed on the second insulating layer and connected to the drainelectrode through the contact hole. The contact hole partially exposesthe color filter near the portion where the drain electrode and thepixel electrode are connected to each other, and the pixel electrodecovers the color filter exposed through the contact hole.

The contact hole has a first region, second region and a third region,wherein the first region is a portion where the drain electrode and thepixel electrode contact each other, the second region is a portion wherethe color filter and the pixel electrode contact each other, and thethird region is a portion where the second insulating layer covers theside wall of the color filter.

The second region may be a portion where the color filter and the pixelelectrode contact at the upper surface and the side wall of the colorfilter.

At least one of the first insulating layer and the second insulatinglayer is made of an inorganic insulating material.

The plane shape of the second region may be extended in a firstdirection from the central part of the first region.

The plane shape of the second region may be extended in the firstdirection from the central part of the first region while having thesame width as the first region.

The plane shape of the second region may be extended in leftward andrightward directions from the central part of the first region, therebyforming a straight shape.

The plane shape of the second region may be extended in leftward,rightward, upward, and downward directions from the central part of thefirst region, thereby forming a cross shape.

The color filter may be made of an organic material.

In accordance with another exemplary embodiment of the presentinvention, a method of manufacturing a thin film transistor array panelis provided. The method includes forming a gate line on a substrate,forming a data line intersecting the gate line, and a drain electrodeseparated from the data line, forming a first insulating layer coveringthe data line, forming a color filter having an opening on the firstinsulating layer, forming a second insulating layer covering the openingon the color filter, forming a contact hole by patterning the firstinsulating layer and the second insulating layer and forming a pixelelectrode contacting the drain electrode filling the contact hole. Theforming of the contact hole includes exposing the upper surface of thedrain electrode and eliminating a portion of the second insulating layercovering the color filter in a position adjacent to the opening.

Forming the pixel electrode may comprise covering directly the colorfilter exposed by eliminating a portion of the second insulating layer.

Forming the color filter having an opening may comprise using aphotolithography process.

Forming the contact hole may comprise forming a first region where thedrain electrode and the pixel electrode contact each other, a secondregion where the color filter and the pixel electrode contact eachother, and a third region where the second insulating layer covers thecolor filter.

At least one of the first insulating layer and the second insulatinglayer may be made of an inorganic insulating material.

The plane shape of the second region may be extended in a firstdirection from the central part of the first region.

The plane shape of the second region may be extended in the firstdirection from the central part of the first region while having thesame width as the first region.

The plane shape of the second region may be extended in leftward andrightward directions from the central part of the first region, therebyforming a straight shape.

The plane shape of the second region may be extended in leftward,rightward, upward, and downward directions from the central part of thefirst region, thereby forming a cross shape.

According to exemplary embodiments of the present invention, whenpatterning an inorganic insulating layer covering the color filter, aportion of the color filter may be exposed, and the remaining portionthereof may cover the inorganic insulating layer such that a slightchange due to damage to the color filter may be prevented, and a fillingfailure of the liquid crystal due to discharge of the color filtermaterial may be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention can be understood in moredetail by reference to the following detailed description in conjunctionwith the accompanying drawings in which:

FIG. 1 is a top plan view of a contact portion according to an exemplaryembodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1.

FIG. 3 is a top plan view of a mask used in the exemplary embodimentshown in FIG. 1.

FIG. 4 is an equivalent circuit diagram of a pixel of a liquid crystaldisplay according to an exemplary embodiment of the present invention.

FIG. 5 is a layout view of a liquid crystal display according to anexemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view taken along the line VI-VI′ of FIG. 5.

FIG. 7 is a top plan view of a contact portion according to an exemplaryembodiment of the present invention.

FIG. 8 is a cross-sectional view taken along the line VIII-VIII′ of FIG.7.

FIG. 9 is a top plan view of a mask used in the exemplary embodimentshown in FIG. 7.

FIG. 10 is a top plan view of a contact portion according to anexemplary embodiment of the present invention.

FIG. 11 is a cross-sectional view taken along the line XI-XI′ of FIG.10.

FIG. 12 is a top plan view of a mask used in the exemplary embodimentshown in FIG. 10.

FIG. 13 is a top plan view of a contact portion according to anexemplary embodiment of the present invention.

FIG. 14 is a cross-sectional view taken along the line XIV-XIV′ of FIG.13.

FIG. 15 is a top plan view of a mask used in the exemplary embodimentshown in FIG. 13.

<Description of Reference Numerals Indicating Primary Elements in theDrawings>  3 liquid crystal layer 11, 21 alignment layer 100 lowersubstrate 110, 210 insulation substrate 121 gate line 124a, 124b gateelectrode 131 storage electrode line 140 gate insulating layer 171a,171b data line 173a, 173b source electrode 175a, 175b drain electrode180p, 180q passivation layer 185a, 185b contact hole 235a, 235b openings191 pixel electrode  191a first sub-pixel electrode  191b secondsub-pixel electrode 200 upper substrate 220 light blocking member 230color filter 270 common electrode

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Exemplary embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the exemplary embodiments described herein,and may be embodied in other forms.

In the drawings, the thicknesses of layers and regions are exaggeratedfor clarity. It is to be noted that when a layer is referred to as being“on” another layer or substrate, it can be directly formed on the otherlayer or substrate or can be formed on the other layer or substrate witha third layer interposed therebetween. Like constituent elements aredenoted by like reference numerals throughout the specification.

FIG. 1 is a top plan view of a contact portion according to an exemplaryembodiment of the present invention, FIG. 2 is a cross-sectional viewtaken along the line II-II′ of FIG. 1, and FIG. 3 is a top plan view ofa mask used in the exemplary embodiment shown in FIG. 1.

Referring to FIG. 1 and FIG. 2, a gate insulating layer 140 is formed onan insulation substrate 110. A first electrode 175 that is made of ametal material is formed on the gate insulating layer 140.

A lower passivation layer 180 p, an organic layer 230, and an upperpassivation layer 180 q are sequentially formed on the first electrode175, and a contact hole 185 exposing the first electrode 175 and passingthrough the lower passivation layer 180 p, the organic layer 230, andthe upper passivation layer 180 q is formed. The first electrode 175 isconnected to a second electrode 191 through the contact hole 185. Thestructure of the contact hole 185 will be described in detail.

The contact hole 185 includes a first region A, a second region A′, anda third region Y. In the first region A, the first electrode 175 and thesecond electrode 191 contact each other. In the second region A′, aportion of the upper surface of the organic layer 230 and a side wallthereof contact the second electrode 191. In the third region Y, theupper surface of the organic layer 230 and the side wall thereof arecovered by the upper passivation layer 180 q. For example, in a view ofa plane side, the third region Y may be a region X where the firstregion A is expanded and the portion except for the second region A′.

According to an exemplary embodiment of the present invention, in thecontact portion where the first electrode 175 and the second electrode191 contact each other, the upper passivation layer 180 q covers almostthe whole organic layer 230, and the second electrode 191 covers theremaining part of the organic layer 230. For example, the plane shape ofthe second region A′ is extended in one direction at the central part ofthe first region A.

The upper passivation layer 180 p or the lower passivation layer 180 qmay be formed of an inorganic insulating material such as, for example,silicon nitride or silicon oxide.

The organic layer 230 may be, for example, a color filter, and the colorfilter may be, for example, a blue color filter, a green color filter,or a red color filter. In the contact portion according to an exemplaryembodiment of the present invention, the upper passivation layer 180 qcovers most of the organic layer 230 such that a slight change due toby-products of the color filter that are generated when forming thecontact hole 185 may be prevented. Also, a portion of the upperpassivation layer 180 q is exposed before forming the second electrode191, thereby having a function as an gas emitter. Accordingly, a fillingfailure of the liquid crystal due to bubbles generated by the componentsof the portion of the organic layer 230 may be prevented.

Referring to FIG. 3, a mask M that is opened at a portion correspondingto the first region A and the second region A′ may be used to form theplane shape of the contact portion according to an exemplary embodimentof the present invention.

FIG. 4 is an equivalent circuit diagram of a pixel of a liquid crystaldisplay according to another exemplary embodiment of the presentinvention.

Referring to FIG. 4, a liquid crystal display according to an exemplaryembodiment of the present invention includes a thin film transistorarray panel 100 and a common electrode panel 200 facing each other, anda liquid crystal layer 3 interposed therebetween.

The liquid crystal display includes signal lines including a pluralityof gate lines GL, a plurality of pairs of data lines DLa and DLb, and aplurality of storage electrode lines SL, and a plurality of pixels PXconnected thereto.

The respective pixels PX include a pair of sub-pixels PXa and PXb, andeach sub-pixel PXa/PXb includes a switching element Qa/Qb, a liquidcrystal capacitor Clca/Clcb, and a storage capacitor Csta/Cstb.

Each switching element Qa/Qb is a three-terminal element such as a thinfilm transistor provided on the lower panel 100, and includes a controlterminal connected to the gate line GL, an input terminal connected tothe data line DLa/DLb, and an output terminal connected to the liquidcrystal capacitor Clca/Clcb and the storage capacitor Csta/Cstb.

The liquid crystal capacitor Clca/Clcb uses a sub-pixel electrode 191a/191 b and a common electrode 270 as two terminals. The liquid crystallayer 3 between the electrodes 191 a/191 b and 270 functions as adielectric material.

The storage capacitor Csta/Cstb serving as an assistant to the liquidcrystal capacitor Clca/Clcb is formed as a storage electrode line SLprovided on the panel 100 and a sub-pixel electrode 191 a/191 boverlapped with an insulator interposed therebetween, and apredetermined voltage such as the common voltage Vcom is appliedthereto.

The voltages charged at the two liquid crystal capacitors Clca and Clcbare established to slightly differ from each other. For example, thedata voltage applied to the liquid crystal capacitor Clca may beestablished to be always lower or higher than the data voltage appliedto the other liquid crystal capacitor Clcb. When the voltages of the twoliquid crystal capacitors Clca and Clcb are properly controlled, animage viewed from the lateral side maximally approximates an imageviewed from the frontal side, thereby improving the lateral visibilityof the liquid crystal display.

FIG. 5 is a layout view of a liquid crystal display according to anexemplary embodiment of the present invention, and FIG. 6 is across-sectional view taken along the line VI-VI′ of FIG. 5.

Referring to FIG. 5 and FIG. 6, a liquid crystal display according to anexemplary embodiment of the present invention includes lower and upperdisplay panels 100 and 200 facing each other, and a liquid crystal layer3 interposed between the two panels 100 and 200.

The lower display panel 100 will be firstly described.

A plurality of gate lines 121 and a plurality of storage electrode lines131 and 135 are formed on an insulation substrate 110.

The gate lines 121 transmit gate signals and are substantially extendedin the transverse direction. Each gate line 121 includes a plurality offirst and second gate electrodes 124 a and 124 b protruding upward.

The storage electrode lines include a stem 131 extending substantiallyparallel to the gate lines 121 and a plurality of storage electrodes 135extended from the stem 131.

However, the shapes and arrangements of the storage electrode lines 131and 135 may be modified in various forms.

A gate insulating layer 140 is formed on the gate lines 121 and thestorage electrode lines 131 and 135, and a plurality of semiconductors154 a and 154 b preferably made of, for example, amorphous orcrystallized silicon are formed on the gate insulating layer 140.

A plurality of pairs of ohmic contacts 163 b and 165 b are formed on thefirst semiconductor 154 b, and the ohmic contacts 163 b and 165 b may beformed of a material such as, for example, n+hydrogenated amorphoussilicon in which an n-type impurity is doped with a high concentration,or of a silicide.

A plurality of pairs of data lines 171 a and 171 b and a plurality ofpairs of first and second drain electrodes 175 a and 175 b are formed onthe ohmic contacts 163 b and 165 b, and on the gate insulating layer140.

The data lines 171 a and 171 b transmit data signals, extendsubstantially in the longitudinal direction, and cross the gate lines121 and the stems 131 of the storage electrode lines. The data lines 171a/171 b include a plurality of first/second source electrodes 173 a/173b extending toward the first/second gate electrodes 124 a/124 b andcurved with a “U” shape, and the first/second source electrodes 173a/173 b are opposite to the first/second drain electrodes 175 a/175 bwith respect to the first/second gate electrodes 124 a/124 b.

The first and second drain electrodes 175 a and 175 b respectively startfrom one end enclosed by the first and second source electrodes 173 aand 173 b and are extended upward, and the other end thereof may have awide area for connection to another layer.

However, the shapes and arrangement of the first and second drainelectrodes 175 a and 175 b and the data lines 171 a and 171 b may bemodified in various forms.

The first/second gate electrodes 124 a/124 b, the first/second sourceelectrodes 173 a/173 b, and the first/second drain electrodes 175 a/175b respectively form the first/second thin film transistors (TFT) Qa/Qbalong with the first/second semiconductors 154 a/154 b, and the channelsof the first/second thin film transistors Qa/Qb are respectively formedon the first/second semiconductors 154 a/154 b between the first/secondsource electrodes 173 a/173 b and the first/second drain electrodes 175a/175 b.

The ohmic contacts 163 b and 165 b are interposed only between theunderlying semiconductor islands 154 a and 154 b, and the overlying datalines 171 a and 171 b and drain electrodes 175 a and 175 b, and reducecontact resistance between them. The semiconductors 154 a and 154 b havea portion that is exposed without being covered by the data lines 171 aand 171 b and the drain electrodes 175 a and 175 b, and a portionbetween the source electrodes 173 a and 173 b and the drain electrodes175 a and 175 b.

A lower passivation layer 180 p preferably made of, for example, siliconnitride or silicon oxide is formed on the data lines 171 a and 171 b,the drain electrodes 175 a and 175 b, and the exposed portions of thesemiconductors 154 a and 154 b.

A light blocking member 220 that is separated by a predeterminedinterval is formed on the lower passivation layer 180 p. The lightblocking member 220 may include a straight portion extended upward anddownward and a quadrangle portion corresponding to the thin filmtransistor, and prevents light leakage.

A plurality of color filters 230 are formed on the lower passivationlayer 180 p and the light blocking member 220. Most of the color filters230 exist in the region enclosed by the light blocking member 220. Thecolor filters 230 have a plurality of openings 235 a and 235 b on thefirst and second drain electrodes 175 a and 175 b. For example, thecolor filter 230 may be a green color filter.

Here, the lower passivation layer 180 p may prevent the pigment of thecolor filter 230 from flowing into the portion of the semiconductors 154a and 154 b.

An upper passivation layer 180 q is formed on the light blocking member220 and the color filter 230. For example, the upper passivation layer180 q may be made of an inorganic insulating material such as siliconnitride or silicon oxide, and may prevent the color filter 230 fromlifting and suppress contamination of the liquid crystal layer 3 by anorganic material such as a solvent flowing from the color filter 230,thereby preventing defects such as an afterimage that may be generatedwhen driving the screen.

However, the light blocking member 220 may be positioned in the upperpanel 200.

The upper passivation layer 180 q and the lower passivation layer 180 phave a plurality of contact holes 185 a and 185 b exposing the first andsecond drain electrodes 175 a and 175 b.

A plurality of pixel electrodes 191 are formed on the upper passivationlayer 180 q, and the color filter 230 may be extended according to thecolumn of the pixel electrodes 191. Also, the branches 135 of thestorage electrode line 131 are disposed between the pixel electrode 191and the data lines 171 a and 171 b.

The pixel electrodes 191 may be formed with a transparent conductivematerial such as, for example, indium tin oxide (ITO) and indium zincoxide (IZO), or with a reflective material such as, for example,aluminum, silver, chromium, and alloys thereof, and each pixel electrode191 includes the first and second sub-pixel electrodes 191 a and 191 bthat are separated from each other.

The first and second sub-pixel electrodes 191 a and 191 b arephysico-electrically connected to the first and second drain electrodes175 a and 175 b through the contact holes 185 a and 185 b so as toreceive data voltages from the first and second drain electrodes 175 aand 175 b.

In the liquid crystal display according to an exemplary embodiment ofthe present invention, the contact portion where the drain electrodes175 a and 175 b and the sub-pixel electrodes 191 a and 191 b areconnected to each other may be applied with the description of thecontact portion shown in FIG. 1 to FIG. 3.

For example, the contact holes 185 a and 185 b include a first region, asecond region, and a third region. The drain electrodes 175 a and 175 band the sub-pixel electrodes 191 a and 191 b contact in the firstregion. In the second region, a portion of the upper surface of thecolor filter 230 and the side wall thereof contact the sub-pixelelectrodes 191 a and 191 b. In the third region, the upper surface ofthe color filter 230 and the side wall thereof cover the upperpassivation layer 180 q.

An alignment layer 11 is formed on the pixel electrode 191. Next, theupper panel 200 will be described.

In the upper panel 200, a common electrode 270 is formed on atransparent insulation substrate 210, and an alignment layer 21 isformed thereon.

The alignment layers 11 and 21 may be vertical alignment layers.Polarizers may be provided on the outer surfaces of the lower panel 100and the upper panel 200.

The liquid crystal layer 3 is interposed between the lower panel 100 andthe upper panel 200. The liquid crystal layer 3 may have negativedielectric anisotropy.

A liquid crystal display is described above, however it is not limitedthereto, and the exemplary embodiment related to the contact portiondescribed with reference to FIG. 1 to FIG. 3 may be applied to anorganic light emitting device.

Hereinafter, variations of the exemplary embodiment related to thecontact portion described with reference to FIG. 1 to FIG. 3 will bedescribed.

FIG. 7 is a top plan view of a contact portion according to anotherexemplary embodiment of the present invention, FIG. 8 is across-sectional view taken along the line VIII-VIII′ of FIG. 7, and FIG.9 is a top plan view of a mask used in the exemplary embodiment shown inFIG. 7.

Referring to FIG. 7 and FIG. 8, most of the structure according to thepresent exemplary embodiment is almost the same as the contact portiondescribed with reference to FIG. 1 to FIG. 3 (hereinafter referred to asa contact portion according to the first exemplary embodiment).

However, different from the contact portion according to the firstexemplary embodiment, the width of the second region A′ in the presentexemplary embodiment is widely formed. The plane shape of the secondregion A′ has the same width as the first region A, and may be extendedin one direction from the central part of the first region A. Forexample, compared with the contact portion according to the firstexemplary embodiment, the organic layer 230 and the second electrode 191directly contact in the further wide range.

Referring to FIG. 9, to form the plane shape of the contact portionaccording to an exemplary embodiment of the present invention, a mask Mthat is opened at a portion corresponding to the first region A and thesecond region A′ may be used. Here, the width of the region B′ that isopened corresponding to the second region A′ may be the same as thewidth of the region B that is opened corresponding to the first regionA.

FIG. 10 is a top plan view of a contact portion according to anotherexemplary embodiment of the present invention, FIG. 11 is across-sectional view taken along the line XI-XI′ of FIG. 10, and FIG. 12is a top plan view of a mask used in the exemplary embodiment shown inFIG. 10.

Referring to FIG. 10 and FIG. 11, most of the structure is the same asthe contact portion according to the first exemplary embodiment.

However, different from the contact portion according to the firstexemplary embodiment, the plane shape of the second region A′ in thepresent exemplary embodiment is extended in the leftward and rightwarddirections from the central part of the first region A, thereby forminga straight line shape. For example, the organic layer 230 and the secondelectrode 191 directly contact each other in the region about two timescompared with the contact portion according to the first exemplaryembodiment.

Referring to FIG. 12, to form the plane shape of the contact portionaccording to an exemplary embodiment of the present invention, a mask Mthat is opened at the portion corresponding to the first region A andthe second region A′ may be used. Here, the opened region B′corresponding to the second region A′ is extended in the leftward andrightward directions from the central part of the opened region Bcorresponding to the first region A, thereby forming the straight shape.In the exemplary embodiment according to the present invention, it isconsidered that the mask is misaligned such that the area where theorganic layer 230 is exposed is decreased when the upper passivationlayer 180 q is patterned.

FIG. 13 is a top plan view of a contact portion according to anotherexemplary embodiment of the present invention, FIG. 14 is across-sectional view taken along the line XIV-XIV′ of FIG. 13, and FIG.15 is a top plan view of a mask used in the exemplary embodiment shownin FIG. 13.

Referring to FIG. 13 and FIG. 14, most of the structure is the same asthe contact portion according to the first exemplary embodiment.

However, different from the contact portion according to the firstexemplary embodiment, the plane shape of the second region A′ in thepresent exemplary embodiment is extended in leftward, rightward, upward,and downward directions from the central part of the first region A,thereby forming a crossed shape. For example, the organic layer 230 andthe second electrode 191 directly contact each other in the region aboutfour times compared with the contact portion according to the firstexemplary embodiment.

Referring to FIG. 15, to form the plane shape of the contact portionaccording to an exemplary embodiment of the present invention, a mask Mthat is opened at the portion corresponding to the first region A andthe second region A′ may be used. Here, the opened region B′corresponding to the second region A′ is extended in the leftward,rightward, upward, and downward directions from the central part of theopened region B corresponding to the first region A, thereby forming thecrossed shape.

Hereinafter, a method for forming a contact portion according to anexemplary embodiment of the present invention will be described withreference to FIG. 1 to FIG. 3.

An insulating layer 140 is formed on an insulation substrate 110. Thefirst electrode 175 made of a conductive material is formed on theinsulating layer 140. A lower insulating material covering the firstelectrode 175 is formed on the first electrode 175. A first photoresistmaterial is coated on the lower insulating material and patternedthrough a photolithography process to form an organic layer 230including a contact hole 185.

An upper insulating material filling the contact hole 185 is formed onthe organic layer 230. A second photoresist material is coated on theupper insulating material, and the upper insulating material and thelower insulating material are etched through photolithography process toform a lower passivation layer 180 p, an upper passivation layer 180 q,and a contact hole 185. Here, the photomask of FIG. 3 may be used forpatterning. In another exemplary embodiment, one of the photomasks ofFIG. 9, FIG. 12, and FIG. 15 may be used.

The second electrode 191 contacting the first electrode 175 at thecontact hole 185 is formed on the upper passivation layer 180 q.

The organic layer 230 may be, for example, a color filter, and the colorfilter may be, for example, a blue color filter, a green color filter,or a red color filter. In the contact portion according to an exemplaryembodiment of the present invention, the upper passivation layer 180 qcovers most of the organic layer 230 such that a slight change due toby-products of the color filter that are generated when forming thecontact hole 185 may be prevented. Also, a portion of the upperpassivation layer 180 q is exposed before forming the second electrode191, thereby having a function as an gas emitter. Accordingly, thefilling failure of the liquid crystal due to bubbles generated by thecomponents of the portion of the organic layer 230 may be prevented.

Hereinafter, a manufacturing method of a liquid crystal displayaccording to an exemplary embodiment of the present invention will bedescribed with reference to FIG. 5 and FIG. 6.

Firstly, an upper panel 100 and a lower panel 200 are manufactured.

The lower panel 100 is manufactured as follows.

A plurality of thin films are deposited and patterned on a substrate 110to sequentially form a gate line 121 including gate electrodes 124 a and124 b, a gate insulating layer 140, semiconductors 154 a and 154 b, datalines 171 a and 171 b respectively including source electrodes 173 a and173 b, drain electrodes 175 a and 175 b, and a lower passivation layer180 p.

Next, a light blocking member 220 preventing light leakage is formed onthe lower passivation layer 180 p, and a plurality of color filters 230are formed on the lower passivation layer 180 p and the light blockingmember 220. The color filters 230 may be made of an organic material,and may have a plurality of openings 235 a and 235 b formed through aphotolithography process.

An upper passivation layer 180 q is formed on the light blocking member220 and the color filter 230.

A method for forming the lower passivation layer 180 p, the color filter230, and the upper passivation layer 180 q will be described in detail.

The first insulating material covering the data lines 171 a and 171 bincluding the source electrode 173 a and 173 b, and the drain electrodes175 a and 175 b, is formed, and the first photoresist material is coatedon the first insulating material. The resist material is patternedthrough a photolithography process to form a color filter 230 having aplurality of openings 235 a and 235 b.

The second insulating material filling a plurality of openings 235 a and235 b is coated on the color filter 230. The second photoresist materialis coated on the second insulating material. The second photoresistmaterial is patterned through a photolithography process. Here, thephotomask of FIG. 3, FIG. 9, FIG. 12, or FIG. 15 may be used forpatterning.

After the second photoresist material is removed by using a developingsolution, a conductive layer such as, for example, ITO or IZO isdeposited and patterned on the upper passivation layer 180 q to form apixel electrode 191.

Next, an alignment layer 11 is formed on the pixel electrode 191.

The upper panel 200 is manufactured as follows.

A common electrode 270 is formed on a substrate 210. Next, an alignmentlayer 21 is formed on the common electrode 270.

Next, the lower panel 100 and the upper panel 200 that are manufacturedas described above are assembled, and liquid crystal is injectedtherebetween to form a liquid crystal layer 3. However, the liquidcrystal layer 3 may be formed by, for example, dripping the liquidcrystal on the lower panel 100 or the upper panel 200.

Having described the exemplary embodiments of the present invention, itis further noted that it is readily apparent to those of reasonableskill in the art that various modifications may be made withoutdeparting from the spirit and scope of the invention which is defined bythe metes and bounds of the appended claims.

1. A thin film transistor array panel comprising: a substrate; a gateline disposed on the substrate; a data line intersecting the gate line;a drain electrode separated from the data line; a first insulating layercovering the data line; a color filter disposed on the first insulatinglayer; a second insulating layer disposed on the color filter and havinga contact hole exposing the drain electrode and the color filter; and apixel electrode disposed on the second insulating layer and connected tothe drain electrode through the contact hole, wherein the contact holepartially exposes the color filter near the portion where the drainelectrode and the pixel electrode are connected to each other, and thepixel electrode covers the color filter exposed through the contacthole.
 2. The thin film transistor array panel of claim 1, wherein thecontact hole has a first region, a second region and a third region, thefirst region is a portion where the drain electrode and the pixelelectrode contact each other, the second region is a portion where thecolor filter and the pixel electrode contact each other, and the thirdregion is a portion where the second insulating layer covers a side wallof the color filter.
 3. The thin film transistor array panel of claim 2,wherein the second region is a portion where the color filter and thepixel electrode contact at the upper surface and the side wall of thecolor filter.
 4. The thin film transistor array panel of claim 3,wherein at least one of the first insulating layer and the secondinsulating layer is made of an inorganic insulating material.
 5. Thethin film transistor array panel of claim 4, wherein a plane shape ofthe second region is extended in a first direction from a central partof the first region.
 6. The thin film transistor array panel of claim 4,wherein a plane shape of the second region is extended in a firstdirection from a central part of the first region while having a samewidth as the first region.
 7. The thin film transistor array panel ofclaim 3, wherein a plane shape of the second region is extended inleftward and rightward directions from a central part of the firstregion, thereby forming a straight shape.
 8. The thin film transistorarray panel of claim 7, wherein at least one of the first insulatinglayer and the second insulating layer is formed of an inorganicinsulating material.
 9. The thin film transistor array panel of claim 3,wherein a plane shape of the second region is extended in leftward,rightward, upward, and downward directions from a central part of thefirst region, thereby forming a cross shape.
 10. The thin filmtransistor array panel of claim 9, wherein at least one of the firstinsulating layer and the second insulating layer is formed of aninorganic insulating material.
 11. The thin film transistor array panelof claim 1, wherein the color filter is formed of an organic material.12. The thin film transistor array panel of claim 11, wherein thecontact hole has a first region, a second region and a third region, thefirst region is a portion where the drain electrode and the pixelelectrode contact each other, the second region is a portion where thecolor filter and the pixel electrode contact each other, and the thirdregion is a portion where the second insulating layer covers a side wallof the color filter.
 13. The thin film transistor array panel of claim12, wherein a plane shape of the second region is extended in leftwardand rightward directions from a central part of the first region,thereby forming a straight shape.
 14. The thin film transistor arraypanel of claim 13, wherein at least one of the first insulating layerand the second insulating layer is formed of an inorganic insulatingmaterial.
 15. The thin film transistor array panel of claim 12, whereina plane shape of the second region is extended in leftward, rightward,upward, and downward directions from a central part of the first region,thereby forming a cross shape.
 16. The thin film transistor array panelof claim 15, wherein at least one of the first insulating layer and thesecond insulating layer is formed of an inorganic insulating material.17. The thin film transistor array panel of claim 1, wherein the pixelelectrode formed on the second insulating layer contacts the drainelectrode at the contact hole, and wherein in this contact portion, thesecond insulating layer covers almost the whole color filter and thepixel electrode covers a remaining part of the color filter includingthe portion of the color filter which is exposed through the contacthole.
 18. The method of manufacturing a thin film transistor array panelcomprising: forming a gate line on a substrate; forming a data lineintersecting the gate line and a drain electrode separated from the dataline; forming a first insulating layer covering the data line; forming acolor filter having an opening on the first insulating layer; forming asecond insulating layer covering the opening on the color filter;forming a contact hole by patterning the first insulating layer and thesecond insulating layer; and forming a pixel electrode contacting thedrain electrode filling the contact hole, wherein the forming of thecontact hole comprises exposing the upper surface of the drain electrodeand eliminating a portion of the second insulating layer covering thecolor filter in a position adjacent to the opening.
 19. The method ofclaim 18, wherein the forming of the pixel electrode comprises coveringdirectly the color filter exposed by eliminating a portion of the secondinsulating layer.
 20. The method of claim 19, wherein the forming of thecolor filter having an opening comprises using a photolithographyprocess.
 21. The method of claim 18, wherein the forming of the contacthole comprises forming a first region where the drain electrode and thepixel electrode contact each other, a second region where the colorfilter and the pixel electrode contact each other, and a third regionwhere the second insulating layer covers the color filter.
 22. Themethod of claim 21, wherein at least one of the first insulating layerand the second insulating layer is made of an inorganic insulatingmaterial.
 23. The method of claim 22, wherein a plane shape of thesecond region is extended in a first direction from a central part ofthe first region.
 24. The method of claim 22, wherein a plane shape ofthe second region is extended in the first direction from a central partof the first region while having a same width as the first region. 25.The method of claim 22, wherein a plane shape of the second region isextended in leftward and rightward directions from a central part of thefirst region, thereby forming a straight shape.
 26. The method of claim22, wherein a plane shape of the second region is extended in leftward,rightward, upward, and downward directions from a central part of thefirst region, thereby forming a cross shape.